Study of kinetic and optical properties semiconductors, solid solutions, low dimensional system on the A3B5 base, eutectics of the semiconductor-metal type.
1. A theory of free carrier absorption is given for quash-two-dimensional and quasi-one-dimensional ternary semiconducting structures when the carriers are scattered by alloy disorder.
2. In the directly crystallized eutectic composition of semiconductor-superconductor, where superconductive phase in the semiconductor matrix is formed in the form of parallel whiskers, it has been revealed the Josephson effect.

Investigation of physical phenomena connected with electron-phonon in narrow-zonal semiconductors processes and high-temperature superconductors.
The energy spectrum and charge carries scattering mechanism in Bi1-X SbX and argentum alloys where determined. The conductivity mechanism in high temperature superconductors on the Bi base is also elucidated.

The energy spectrum of impurity states and electrotransport phenomena in semiconductors. Grow the and characterization of semiconductors. Research of influence of defects in electronic processes in p-n structures of integrated circuits with the purpose of prevention in them degradation processes, increasing their durability and reliability.
The ground-state binding energies of deep impurities in Ge-Si allows have been experimentally determined. Random allows splitting of the deep impurity levels due to different local surroundings of the defect core in the crystals is observed. An expression for allow and phonon scattering is derived for electrons and holes in Ge like Ge-Si single crystals. A modified double crucible method was developed to grow graded and uniform Ge-Si bulk single crystals using the continuous feeding of the melt with a Si rod. The metal-dielectric transition of the Dc-conductivity along the individual dislocation are revealed. The features of the influence of the impurity atmosphere on the electrical activity of the dislocations in Si are studied. The formula of the dependence of the critical value of the breakdown electrical intensity (Ecr) of the p-n structures on the size (R) and the Charge density (e·Nt) of the clusters in the space charge layer are obtained: Ekр=eNtR/6ee0, (e - is the electron charge, e0 - electr. const).

Synthesis and growing of monocrystals, binary, threefold and complex metal-chalcogenide connection, definition of the crystal structure and research of the mechanism of structural phase transformations into them.
For the first time it is shown, that for polymorphing transformations irrespective of types of connection to a matrix and growing phase all forms of grows of a crystal of new modification, that is faceted, layered, rhythmic, dendritic, elastic which are known for grows of crystals from smelting and pair are characteristic. Orientational connections between lattices of phases mostly are absent, and when are available, are not connected to similarity of structures. Hence despite of essential specific features of poly morphic transformations, more wadded is the general statement that the crystal of a new phase grow the germinal mechanism from a crystal environment.

Energy spectrum, thermodynamic and electromagnetic properties of low-dimensional systems.
1. The theory of spreading of electromagnetic waves-polaritons in semiconductor superlattices was constructed.
2. Energy spectrum of narrow and zero-gap-semiconductor quantum dots was found.

Laboratory of physics of nanocrystalls. Head of Scientific Problem academician F.M. Hashimzadeh.
Theoretical study of energy spectrum and physical properties of artificial low-dimensional systems.

Investigation of the influence of structural heterogeneities and impurities on electric, optic, photoelectric and thermal properties of linear polymeric semiconductors and glassy semiconducting systems on Se-based under the effect of outside factors.
There have been established mechanisms and found out peculiarities of electron processes in Se and chalkogenide glassy semiconductory systems on its base, there have been determined energy spectrum and the character of localized states, also control methods of electron properties are suggested.

The investigations of electronic and vibrational spectra of highly anisotropic semiconductors, the influence of intertal fields on these spectra and construction on the basis of investigated crystals of new optoelectronic devices.
The electronic and vibrational spectra of highly anisotropic crystals of A3B6 (GaSe, TlSe etc.) and A3B3C62 (TlInS2, TlInSe2 etc.) groups, the influence of temperature, pressure, high optical excitation on these spectra have been established. The physical properties of a new class of ferroelectrics-semiconductors with layer crystaline structure and transformations of these properties with temperature and pressure unduced phase non-lined optical transforme of IR radiation, high sensitive UV detectors, modulators and deflectors of optical radiation, enc have been constructed.

Investigation on nonequilibrium electronic processes in heterostructures on basis Si and chalgenide semiconductors. Influence of radiation on their physical properties. Obtaining of thinfilm solar cells on a chalcogenide semiconductors and investigation on their properties. Diffusion processes and formation of defects in solid states. Investigation on influence laser irradiation and radiation semiconductors and opitaxsial structures.
The method of deep levels transient spectroscopy there were investigated the deep levels of nickel in silicon. Parameters of these levels and their nature are determined. It is shown, that:
a) at evaporating on surface silicon of solar cells of two layer coats ZnS + Na2O3the magnification of a photoelectric at 60%, efficiency =15% (for solar cells without a coat h=9,3%) is observed;
b) in thin film solar transformers on a basis nCdS-pCdTe, obtained by a method vacuum evaporation in quasi-closed volume, effectency = 9,6% and I= 22mA/cm2.

Interaction, phaseformations, structure and phasetransformations kinetics of thin films.
The regularities of interaction, phaseformation and phase transformation kinetics have been established by the kinematic electron diffraction method.

Semiconductors physics, optoelectronics.
Creation of thin film solar cells and investigation of their photoelectric properties. Thin film luminescent materials rare-earth doped thiogallates.

Study of making of electron-image tube, study of the physical processes occurring in the vacuum bulk and elements, and also phenomena of the electron emission, development of the new types of EOT with the improved characteristics, making of radiation-resistant photodetector on the basis of layered semiconductor.
For the first time it has been established: new types of galvanomagnetic effects-emission, phenomena of the photo-controlled self-sustaining emission, magnetic-electron emission and vibroelectron emission; the radiation resistant photodetectors have been created on the basis of the layered semiconductor materials. Creation of modern investigation and technological bases for manufacturing of infrared detectors and sources of infrared radiations. Different technological processes have been developed and, also, different types of photo receiver devices and infrared radiation sources for optoelectronic circuits of citizen and special application have been produced.

Opting, researches of electrical optical, photoelectric and luminescent properties semiconductors compounds on base of rare-earth element.
The first obtained laser yellow-green emission wave-lenght tenability extending to ~100°A in compound CaGa2S4 rare-earth element. Compound CaGa2S4 rare-earth element type was using for creation electroluminescent wainscot.

1. Investigations of energy spectra of the A2B23C46 type mixed diamond like chalkogenides and the layered-chained compounds of A3B6, A3B3C26 type.
2. Molecular spectroscopy of the free-radical status of the organic molecules.
As the result of the investigation (experimental, theoretical-group, theoretical calculations) the features of formation of the electron and vibration spectra of compounds A2B23C46 (ph.gr.S42) have been established. The characters of optical transition in the high symmetrical points of the Brillouin zone have been established, the parameters of the valence band-spin-orbital and lattice scattering the deformation potentials of band extrema have been determined. The influence of hydrostatic pressure on the phonon spectra of some A2B23C46 compounds have been investigation. In the Harrison-Kitting model Grunaizen parameter and bulk modules have been determined to describe the optical phonons under the influence of pressure. The analyses of solution of the dynamical matrix shoved, that the low frequency phonons are connected with the vibrations, in which the angle between the bonds changes, but high frequency phonons are connected with the changes of length of the bonds under the pressure. The nonequlibrium processes (photoconductivity, photoluminescence, thermo stimulated conductivity) of the mentioned compounds have been investigated. Spectra of the local states, the mechanism of the generation-recombination processes determined. The features of the phonon spectra and their change under pressure, anisotropy of terminal expansion and thermo conductivity in the range of 5-300 K of compounds of A3B6 (GaS, GaSe, InSe,TlSe), the nature of negative thermal expansion, also in graphite and nitride bor, the mechanism of the carry of carries and localization effects in the electron spectra, the influence of g-radiation and strong magnetic field (to 8 Tl) on transport of carries in InSe and TlSe. The regularities of the electron-vibration structure of the mono-, di- and threemethilbenzole hydrocarbons in paraffin matrix in the low temperature range have been established.

Investigation of mechanism of structure and properties formatoin of Se, creation of electrophotographyc layers on the base of Se and its compounds.
There have been revealed main regularities of structure and properties formatoin of Se, new electrophotographyc layers on the base of Se and its compounds have been created.

Laboratory of semiconductors quantum electronics. Not information about scientific works.

Microwave spectroscopy of polar molecules, development of programmed microwave synthesizers of frequency, development microwave spectrometers of various assignment, development nonstandard at stack flue both clusters of a scientific and applied direction, compilation of programs for calculation of the rotation spectrums of polyatomic molecules.
More than 2000 rotary transitions of trance and gauche-form of a molecule of isoproponal for the first time identified and are retrieved optic centrifugal distortion constants of this molecule. The rotation spectrum of a molecule (HD3)2CDOH for the first time identified. The hybrid spectrometer is created on the basis of the designed cross-section synthesizer of frequencies.

Development of the scientific principles of the creation and applying high-performance thermo- and magnetothermoelectric materials, electronic transducers, methods of measurings and non-destructive diagnostic for the optoelectronic devices.
High-performance and suitable for a broad implemention in production thermo- and magnetothermoelectric extruded materials on the basis of the bismuth tellurides and bismuth-antimony systems solid solutions have been developed; the mechanisms of the electronic and photon phenomena in these materials have been ascertained; the structure, mechanisms of the regularities of the electronic and physico-chemical properties of commutational contacts of thermoelements on the basis of the bismuth tellurides and bismuth-antimony systems solid solutions have been established; more effective know-how for thermoelements of the commutation have been developed and introduced into production; on the basis of the designed high-performance materials two-, three- and four- stade thermoelectric coolers for a temperature level down to 190 K have been created and introduced into series production. Photoconducters with termoelectric coolers, new methods of measurings and non-distructuve diagnostic for the photoelectronic deveces have been developed.

Development of scientific bases of technological processes for creation of high-effective infrared detectors and photoreceiver devices (3-5 µm and 8-14 µm) on the basis of narrow-gap semiconductors (ZnSb, CdxHg1-xTe, Pb1-xSnxTe, etc.) and investigation of photoelectrical properties of structures maded on the basis of these materials.
1. The creation of the modern investigation and technological bases for manufacturing of high-sensitive infrared detectors.
2. Different technological processes have been developed and different types of detectors and multielement low-dimensional matrix structures on the basis of ZnSb and CdxHg1-xTe for 3-5 µm and 8-14 µm have been created for citizen and special application.

Complex investigation of growth peculiarities of epitaxial films of compounds of solid solutions of n/n type A4B6 on different backings. Receipt of structural-perfect films with specified electrophysical and photoelectrical properties. Creation of photosensitive p-n homo- and heterostructures on their basis and making of photodetectors of the infrared radiation.
Correlation was established between crystal structure, electrophysical and photoelectrical properties of epitaxial films of n/n type A4B6 grown on different backing. At united technological regime, for the first time, photosensitive homo-transitions PbS/PbS; PbSe/PbSe; PbTe/PbTe and isoperiodical hetero-transitions Pb1-xSnxTe/PbTe1-ySey; Pb1-xSnxSe/ PbSe1-ySy and photodetectors of the infrared radiation were produced.

Investigation of interaction of optical and acoustic waves in photo-electric media. Development of acoustoopical methods and devices of information processing.
New acoustooptical methods and devices of information processing. Acoustoopical agreed filter.

Material science of multinary low-dimensional semiconductor chacogenids of TlMCVI2 and AIMCVI2 - types (M-In, Ga, Co, Ni, Fe, Cr, Mn, REE; AI- Cu, Ag, Au, C-S, Se, Te)
Technology of growth of chain and layer single crystals of TlMCIV2 and AIMCIV2- types have been worked out. Electrical photoelectrical, thermal, optical properties of these crystals have been investigated at various extremal effects: elctric and magnetic fields, temperature, pressure, laser irradiation roentgen-gamma radiation, electron and neutron bombardment. Roentgen and gamma-detectors, tenzometer, photoelectrical analisator were created on the base of TlMCIV2 and AIMCIV2 single crystals.

The growing of complecs semiconductor materials and investigation of their physical properties.
1. The growing technology of the perfect layered III-VI single crystals had been developed by the method of "slow cooling at constant gradient of temperature".
2. Tne development of the industry tehnology of the thermo-electrical n- and p- type solid solusions on the basis of Bi2Te3.
3. Influence of the Te includings on electrical-physical characteristics of the CdXHg(1-X)Te single crystals as well as on parameters of detectors on the basis of CdXHg(1-X)Te.

Laboratory of optical and photoelectrical diagnostics of semoconductors structures. Not datas about works.

Quantum Field Theory, Elementary particle physics, Relativistic bound states in quantum mechanics, dynamical symmetries orthogonal polynomials.
A Hamiltonion formulation of relativistic QFT on the light cone. A general formalism for the describing of the deep-inelastic lepton-hadrons scattering processes, aq-factorization method were developed, Wigner representation was constructed, SUSY models of electroweak interactions were inroduced. Some proporties of the classical and q-orthogonal polynomials were investigated.

Experimental physics of particls end nucleys.
The properyies of particles and nucleys in hadron-hadron and hadron-nucleys interactions at high energies were investigated.

The investigation of final products of stellar evolution (pulsars, Supernova remnants (SNRs), anomalous X-ray pulsars, soft Gamma-ray repeaters etc.) which are the main sources of cosmic rays.
Neutrino spectra and fluxes from SNe explosions were predicted; X-ray pulsars has been predicted three years before of theif detection; Ring-shape distribution of radio pulsars in the Galaxy has been established; calibrating dependencies for SNRs in real ISM have been suggested; applicability of the diffusive shock acceleration mechanizm to SNRs is established; power-low bremsstrahlung emission from the young SNRs is predicted; Classification of WD is carried out and their progenitors are established.

Investigation of thermodynamik properties of semiconductor systems, development of physical-chemical fundamentals for the technology their synthesis, calculation of atomiration energy, development of chermical current sources on their basis.
Has been investigated thermodynamical properties of aluminium, gallium, indium, r.e. elements, cupper and silver chalcogenides, as were studied phase transition in tham, has been obtein singlcrystals. There were development of chemical current sources on their basis.

1. Development of effective method for protection of electrotechnical equipment from over voltages.
2. Development of theoretical basis of application of electro physical effects in technological processes.
3. Development and synthesis of varistors with high nonlinearity factor for the overvoltages limitators in the electric networks.
4. Mass-spectrometric analysis of gas-liquid and solid substances.
5. Secondary Ion Mass-spectrometry (SIMS).
1. Modern methods of High Voltage Circuits protection from over voltages and short circuit currents are developed and used in industry.
2. New mechanisms of development of electro physical processes in dielectrical materials under influence of strong electrical fields and discharges.
3. The kinetical nature of mechanical and electrical destruction of polymers and compositions on a basis piezoceramics, photosemiconductors, magnetic is established photo-, thermo luminescent, maqnetic and dielectric of properties of this composition are investigated, the correlation between strength properties and charging condition, character of change strength of properties depending on the entered additives is investigated and the concentration of components at which the optimum polymeric composition turns out is found.
4. The experimental model of the overvoltages limitator on 10 кV is developed and made.
5. The technique of noncontact vibroacoustic diagnostics of the rotor type machines’ details and units is developed.
6. On the basis of research piezoelectric composite the device for registration artery pulse of waves is created.
7. Development of the Spark Ion Source for determination of composition of gas and solid metal’s admixtures by the mass-spectrometric method. Have been investigated the charged composition of ions at the mass-spectrometric analysis of solid dielectrics including polymerous.
8. Development of the system for generating primary bombarding particles (Ar, Ar+) with the energy 1-5 kiloelectronvolt. Have been investigated the influence of physicochemical parameters of secondary ions on their comparative liberation in SIMS.

1. Development of physical-chemical bases of creation of active composite , including hybrid and nanocomposits;
2. Study of mechanisms of the electret, piro-, piezo-, photoelectric, photovoltaic, electro- and thermo luminescent, piezoresistive, varistor, posistor effects in composites on the basis of various polymers, ferroelectrics and semiconductors;
3. Development of physical base of creation of multifunction converters on the bases of above named composites;
4. Research of physics of discharge plasma between dielectrics and use of the gas category in the technological purposes;
5. Influence of plasma of the gas category on physical-mathematical and electric properties of polymer dielectrics under various conditions, including cryogenic temperatures.
A complex research of mathematical, electro-thermo luminescent, thermal properties, boundary polarization, electron-ion and relaxation processes, interface phenomena and a charge state of composites in carried out in the laboratory. A possible mechanism of formation of the piro-, piezoelectric, electret. posistor, varistor, piezoresistive, photoelectric, photovoltaic effects in disorder systems of -piezoelectric and polymer-semiconductor is offered. By research of pyroelectric properties of composites on the bases of polymer-piezoceramics it is established that the reason of formation of the pyroelectric effect is high reorientation polarization in a piezo-phase under action of an electric field of the injected charges on the phase boundary. It is found that piezoceramics having a domain-orientation polarization which is distinct from 180° and a rhombo hedral structure are effective components for pyroelectric composites.By research of electret properties of composites it is established that the reason of occurrence of the electret effect in composites structure of a polymer and formation of a quasineutral system of type the injected electron and oriented on a direction of a field the domain in a particle as a result of polarization. The mechanism of change of an efficient electret charge and electret of a potential difference from temperature and an electric intensity in the polymer- piezoelectric composites is offered. It is found that for electret properties composites obtained on the base of the rhombo hedral piezoceramics are effective than composites on the base of the tetragonal piezoceramics. The model of electret composites and on the base of this model the mechanism of occurrence of electret properties in no polar polymers after dispersion their by piezoelectric particles are offered.Researches showed that a dispersion of no polar (polyolefin) and polar (fluor carbon) polymers by semiconductor and piezoelectric particles leads to formation in the composites on the basis of their of the varistor and posistor effects due to formation of a potential barrier on the phase boundary and the change of its under action of temperature and an electric field. It is established that a structure (a polarity, super molecular structure), a dielectric constant and an increase of a volume at the melting point of a polymer matrix substantially influence on the varistor and posistor properties of polymer-semiconductor composites due to an immediate dependence on their the value of potential barrier on the polymer-semiconductor phase boundary. The technology and methods of obtaining of high effective composition posistor and resistor materials in the polymer-semiconductor system are developed. On the composition polymer elements are developed electro acoustic converters, hydro acoustic send-receive aerials, devices of acoustic electronics, opto-acoustic transducers, gauges of tones of Korotkov, vibration pick-ups, seysmo-pick-ups, gauges of static and dynamic pressures, many of which have found serial application at factories and the enterprises of the various Ministries.

The study of deqeradation-oxidation processes in bios stems stimulated by the action of unfavorable environmental factors (electromagnetic and after radiations).
It is revealed the features of participation of selenium as natural antioxidant of biochemical objects to the degradation-oxidation processes induced by action of anthropogenous factors.

Not information about scientific and technical works and publications.

Not information about scientific and technical works and publications.

Investigations of influences of structure and spin anisotropy on magnetic and heat properties of low dimensional crystals and spin glass.
It is shown that semiconductory compounds of TlFeS2 and TlFeSe2 are quasi one-dimensional magnetics. From the Mossbauer investigations and magnetic susceptibility shown that CoGa(2-x)FexO4 (x=0,1-1) materials are a spin glass behaviour.

Not information about scientific and technical works and publications.

Not information about scientific and technical works and publications.

Not information about scientific and technical works and publications.

Energetic spectrums and nature of chemical bonds in semiconductors of type base. Creating new device and systems of transmitting, receiving and saving optical information
For addition: Journal "Fizika" of Institute of Physics, Informational service for Institute of Physics and others.

Encyclopedic investigation of physical-technical process and terms and composition of texts in Azerbaijani.
On the basis of analysis of actuality and significance of existing physical terms Dictionary of physics terminology in Azerbaijani and Russian languages, containing thousand words was compiled.